? 2014 ixys corporation, all rights reserved ixyh30n65b3d1 IXYQ30N65B3D1 v ces = 650v i c110 = 30a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.1v t fi(typ) = 33ns ds100637(11/14) features ? optimized for low 5-30khz switching ? square rbsoa ? anti-parallel fast diode ? avalanche rated ? short circuit capability advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 1.5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 1.8 2.1 v t j = 150 ? c 2.2 v advance technical information symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 70 a i c110 t c = 110c 30 a i f110 t c = 110c 50 a i cm t c = 25c, 1ms 160 a i a t c = 25c 10 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 60 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 5 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 270 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight to-247 6.0 g to-3p 5.5 g xpt tm 650v igbt genx3 tm w/ diode g = gate c = collector e = emitter tab = collector to-3p (ixyq) tab g c e to-247 (ixyh) g c e tab extreme light punch through igbt for 5-30khz switching
ixys reserves the right to change limits, test conditions, and dimensions. ixyh30n65b3d1 IXYQ30N65B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 1.4 v i rr t j = 150c 23 a t rr t j = 150c 133 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, -di f /dt = 500a/ s, v r = 400v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 11 19 s c ie s 1240 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 172 pf c res 30 pf q g(on) 45 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 8 nc q gc 23 nc t d(on) 17 ns t ri 38 ns e on 0.83 mj t d(off) 87 ns t fi 33 ns e of f 0.64 1.20 mj t d(on) 17 ns t ri 40 ns e on 1.63 mj t d(off) 106 ns t fi 93 ns e off 1.00 mj r thjc 0.55 c/w r thcs 0.25 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 10 ? note 2 inductive load, t j = 150c i c = 30a, v ge = 15v v ce = 400v, r g = 10 ? note 2 to-3p outline 1 = gate 2,4 = collector 3 = emitter
? 2014 ixys corporation, all rights reserved ixyh30n65b3d1 IXYQ30N65B3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 00.511.522.533.5 v ce (v) i c (a) v ge = 15v 13v 12v 10v 7v 9v 8v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 v ce (v) i c (a) v ge = 15v 8v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 00.511.522.533.54 v ce (v) i c (a) v ge = 15v 13v 12v 11v 10v 9v 6v 8v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j (oc) v ce(sat) - normalized v ge = 15v i c = 30a i c = 15a i c =60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 8 9 10 11 12 13 14 15 v ge (v) v ce (v) i c = 60a t j = 25oc 30a 15a fig. 6. input admittance 0 10 20 30 40 50 34567891011 v ge (v) i c (a) t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixyh30n65b3d1 IXYQ30N65B3D1 fig. 7. transconductance 0 4 8 12 16 20 24 28 0 5 10 15 20 25 30 35 40 45 50 55 i c (a) g f s (s) t j = - 40oc 25oc 150oc v ce = 10v fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 v ce (v) i c (a) t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g (nc) v ge (v) v ce = 325v i c = 30a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce (v) capacitance (pf ) f = 1 mh z c ies c oes c res fig. 12. maximum transient thermal impedance (igbt) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) z (th)jc (oc / w) fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds (v) i d (a) t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s dc
? 2014 ixys corporation, all rights reserved ixyh30n65b3d1 IXYQ30N65B3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.8 1.2 1.6 2.0 2.4 2.8 10 20 30 40 50 60 70 80 r g ( ? ) e off (mj) 0 2 4 6 8 10 e on (mj) e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 16. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 10 20 30 40 50 60 70 80 r g ( ? ) t f i (ns) 0 80 160 240 320 400 480 560 640 t d(off) (ns) t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 14. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 15 20 25 30 35 40 45 50 55 60 i c (a) e off (mj) 0 1 2 3 4 5 6 e on (mj) e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 50 75 100 125 150 t j (oc) e off (mj) 0 1 2 3 4 5 6 7 e on (mj) e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 17. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 60 i c (a) t f i (ns) 40 60 80 100 120 140 160 180 200 t d(off) (ns) t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j (oc) t f i (ns) 60 70 80 90 100 110 120 130 140 t d(off) (ns) t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 30a, 60a
ixys reserves the right to change limits, test conditions, and dimensions. ixyh30n65b3d1 IXYQ30N65B3D1 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 60 i c (a) t r i (ns) 14 15 16 17 18 19 20 21 22 t d(on (ns) t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductiv e turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 50 75 100 125 150 t j (oc) t r i (ns) 14 16 18 20 22 24 26 t d(on) (ns) t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 10 20 30 40 50 60 70 80 r g ( ? ) t r i (ns) 0 20 40 60 80 100 120 140 t d(on) (ns) t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 22. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 f max (kh) i c (a) t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 10 ? d = 0.5 square wave triangular wave
? 2014 ixys corporation, all rights reserved ixys ref: ixy_30n65b3d1(4d-y42) 11-19-14 ixyh30n65b3d1 IXYQ30N65B3D1 fig. 23. diode forward characteristics 0 10 20 30 40 50 60 70 80 90 00.511.522.53 v f (v) i f (a) t j = 150oc t j = 25oc fig. 24. reverse recovery charge vs. -di f /dt 0.8 1.0 1.2 1.4 1.6 1.8 2.0 200 300 400 500 600 700 800 900 -di f / dt (a/s) q rr (c) t j = 150oc v r = 400v i f = 60a 30a 15a fig. 25 reverse recovery current vs. -di f /dt 10 15 20 25 30 200 300 400 500 600 700 800 di f /dt (a/s) i rr (a) t j = 150oc v r = 400v i f = 60a 30a 15a fig. 26. reverse recovery time vs. -di f /dt 80 100 120 140 160 180 200 220 200 300 400 500 600 700 800 -di f /dt (a/s) t rr (ns) t j = 150oc v r = 400v i f = 60a 30a 15a fig. 28. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc (oc / w) fig. 27. dynamic parameters q rr, i rr vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 30a -dif /dt = 500a/s
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